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comsol multiphysics© software  (COMSOL Inc)

 
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    COMSOL Inc comsol multiphysics© software
    Comsol Multiphysics© Software, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/result/comsol multiphysics© software/product/COMSOL Inc
    Average 90 stars, based on 1 article reviews
    comsol multiphysics© software - by Bioz Stars, 2026-04
    90/100 stars

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    Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL <t>Multiphysics©.</t> Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.
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    Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL Multiphysics©. Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.

    Journal: Nanoscale Advances

    Article Title: Critical role of precursor flux in modulating nucleation density in 2D material synthesis revealed by a digital twin †

    doi: 10.1039/d5na00202h

    Figure Lengend Snippet: Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL Multiphysics©. Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.

    Article Snippet: We used COMSOL Multiphysics© to develop a coupled 3D model of gas-flow, precursor concentration, and temperature distribution for a realistic simulation of the CVD process.

    Techniques: Labeling, Insulation, Microscopy